Semiconductor Nanowires for Optoelectronic Device Applications
With their unique one-dimensional nanoscale geometry, as well as excellent optical and electrical properties such as direct bandgap, large absorption coefficient and charge-carrier mobility, III-V compound semiconductor nanowires (NWs) have shown great promises for electronic, optoelectronic and photovoltaic device applications. III-V nanowires can be fabricated by a variety of crystal growth techniques, among which the selective area epitaxy growth has the advantages of accurate control of the position, geometry, uniformity and doping of NWs to achieve excellent and reproducible device performances. In this talk, I will present the research activity at the Australian National University on the synthesis of high quality, stacking-fault-free and taper-free InP based nanowires using selective-area metal-organic chemical vapour deposition technique, as well as design, fabrication and characterization of a series of nanowire structures for optoelectronic device applications, including infrared photodetectors, THz detectors, solar cells and LEDs etc.
Lan Fu received her PhD degree from the Australia National University (ANU) in 2001. Lan Fu is currently a Professor and Associated Director (HDR) at the Research School of Physics and Engineering, ANU. Professor Lan Fu was the recipient of the IEEE Photonic Society Graduate Student Fellowship (2000), Australian Research Council (ARC) Postdoctoral Fellowship (2002), ARF/QEII Fellowship (2005) and Future Fellowship (2012). She is a senior member of IEEE, IEEE/Photonics and EDS societies. She is the current member of the National Committee on Materials Science and Engineering, Australian Academy of Science, and Secretary of the Executive Committee of Australian Materials Research Society (AMRS). Her main research interests include design, fabrication and integration of optoelectronic devices (LEDs, lasers and photodetectors) and solar cells based on low-dimensional III-V compound semiconductor structures including quantum wells, self-assembled quantum dots and nanowires grown by metal-organic chemical vapour deposition (MOCVD).