MCATM Seminar: Lain-Jong Li - 2D Transition Metal Dichalcogenide Monolayer: A Promising Candidate for Next Generation Electronics
- 7 November 2016 at 10:00 am – 7 November 2016 at 11:00 am
- G30 New Horizons Centre, 20 Research Way
- Monash Clayton
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- Seminars & Workshops
Research Seminar hosted by the Monash Centre for Atomically Thin Materials
Atomically thin 2D Transition metal dichalcogenide (TMD) materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. Recent demonstration in vapor phase growth of TMD monolayer as MoS2 and WSe2 has stimulated the research in growth and applications. The growth of TMD layers is scalable and these layer materials can be transferred to desired substrates, making them suitable building blocks for constructing multilayer stacks for various applications. 2D monolayer building blocks can be used to form p-n junctions.
It is known that Moore’s law may not be valid in 7 nm technology nodes if we consider only Si or III-V semiconductors. 2D TMD materials are also promising materials for post-Si electronics, where their ultra-thin body structure may be able to serve for 5 nm and 3 nm technology nodes, meaning that Moore’s Law could be further extended with these materials. We have demonstrated a 10 nm channel length of transistor based on MoS2 few layers using microelectronic compatible processes.
- Tich-Lam Nguyen
- +61 3 990 59278
- Monash Centre for Atomically Thin Materials