MCATM Seminar:Contact resistance, doping and carrier transport in emerging MoS2 devices

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Event Details

Date:
15 March 2017 at 3:00 pm – 15 March 2017 at 4:00 pm
Venue:
G29/G30 New Horizons Centre
Campus:
Clayton
Open to:
All welcome
Cost:
Free
Categories:
Seminars & Workshops

Description

Abstract

The past decade has seen an explosion in research on 2D materials covering a broad spectrum of applications ranging from sensing to electronics. However many fundamental challenges towards realizing the full potential of these materials for future technologies still remain.

Recent efforts in our group at reducing contact resistance to MoS2, selectively doping it to realize high performance lateral p-n junctions, and understanding the origins of hysteresis in MoS2 transistors will be discussed. Infrastructural and fabrication expertise relevant to 2D material characterization and device fabrication available in our research group will also be presented.

About the Speaker

Prof. Saurabh Lodha graduated with a B. Tech (EE) from IIT Bombay in 1999 and with a Masters (ECE) and PhD (ECE) from Purdue University in 2001 and 2004 respectively. His graduate research focused on III-V metal/semiconductor interfaces and molecular electronics.

From 2005-2010 he worked at Intel Corporation in Portland, USA where he was part of the team responsible for the research and development of 45nm, 32nm and 22nm CMOS technologies. He joined IIT Bombay in July 2010 where his current research interests are in the areas of advanced CMOS, 2D TMD devices and Si photovoltaics.


Event Contact

Name
Tich-Lam Nguyen
E-Mail
tich-lam.nguyen@monash.edu
Phone
+61 3 9905 9278
Organisation
Monash Centre for Atomically Thin Materials